Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Physical deformation
Reexamination Certificate
2005-01-25
2005-01-25
Nelms, David (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Responsive to non-electrical signal
Physical deformation
C438S053000
Reexamination Certificate
active
06847090
ABSTRACT:
The present invention is directed to a process for the manufacture of a plurality of integrated capacitive transducers. The process comprises the steps of supplying a first substrate of a semiconductor material having first and second faces, supplying a second substrate of a semiconductor material having first and second faces, forming a diaphragm layer on the first face of the first substrate, forming a backplate layer on the first face of the other of the second substrate, forming a support layer on the backplate layer, etching a plurality of supports from the support layer, for each of the capacitive transducers, etching a plurality of vents from the backplate layer, for each of the capacitive transducers, positioning the diaphragm layer of the first substrate adjacent with the support layer of the second substrate, and welding the diaphragm layer and the support layer together, removing at least a portion of the first substrate to expose the diaphragm layer, for each of the capacitive transducers, removing a portion of the second substrate to expose the vents, for each of the capacitive transducers, and, etching a portion of the diaphragm layer, for each of the capacitive transducers.
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European Search Report for Application No. 02250467.4 dated Oct. 1, 2003.
Hoang Quoc
Knowles Electronics LLC
Nelms David
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