Silicon cap for annealing gallium arsenide

Details Silicon cap for annealing gallium arsenide Silicon cap for annealing gallium arsenide

1985-02-27

1986-10-07

Smith, John D.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

148 15, 148DIG84, 427 86, 427 87, 156643, 2504923, H01L 21265

Patent

active

046157662

ABSTRACT:
A method of manufacturing GaAs semiconductor devices includes the steps of emplacing doping impurities by ion implantation on at least one surface of a GaAs substrate, and a step of annealing to remove damage resulting from the implantation of the impurities in the GaAs material. Prior to the annealing, a silicon capping layer is deposited on the surface by either sputtering, evaporation, or vapor deposition to a thickness of 100-10,000 angstroms. Subsequent to the annealing, the silicon capping layer is removed by etching. The silicon cap prevents out-diffusion of arsenic from the GaAs, and has a coefficient of thermal expansion which is sufficiently close to that of the GaAs to inhibit the formation of cracks in the capping layer.

REFERENCES:
patent: 4267014 (1981-05-01), Davey
Antell, "The Diffusion of Silicon in Gallium Arsenide," Solid-State Electronics, Pergamon Press, vol. 8, pp. 943-946, 1965.
Greiner, "Diffusion of Silicon in Gallium Arsenide . . . " Appl. Phys. Lett., vol. 44, No. 8, Apr. 1984, pp. 750-752.
Donnelly "Silicon and Selenium Ion-Implanted GaAs . . . " Appl. Phys. Lett., vol. 27, No. 1, Jul. 1975, pp. 41-43.
Vaidyanathan et al., "Study of Encapsulants for Annealing GaAs," J. Electrochem. Soc.: Solid-State Science and Technology, Nov. 1977, pp. 781-784.
Wang, "Amorphous Gallium Arsenide as Caps for Ion Implantation and Annealing", IBM TDB, vol. 26, No. 10B, Mar. 1984, p. 5387.
Gansauge "Producing PNP-Type GaAs Transistors Having Extremely Thin Bases," IBM TDB, vol. 9, No. 1, Jun. 1966, p. 86.
Vieland, "The Effect of Arsenic on Impurities Diffusion in Gallium Arsenide, pp. 318, 319, 1961, RCA Semiconductor and Mtls. Div.
Anderson, "Smooth and Continuous Ohmic Contacts to GaAS . . . " J. Appl. Phys., 49(5) May 1978, pp. 2998.

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