Semiconductor device manufacturing: process – Making device or circuit responsive to nonelectrical signal – Responsive to electromagnetic radiation
Reexamination Certificate
2005-12-27
2005-12-27
Dang, Phuc T. (Department: 2818)
Semiconductor device manufacturing: process
Making device or circuit responsive to nonelectrical signal
Responsive to electromagnetic radiation
C438S485000, C438S488000
Reexamination Certificate
active
06979589
ABSTRACT:
An excellent silicon-based thin-film photoelectric conversion device is manufactured simply and efficiently at a low cost. Specifically, a method of manufacturing the silicon-based thin-film photoelectric conversion device including a p-type semiconductor layer, an i-type microcrystalline silicon-based photoelectric conversion layer and an n-type semiconductor layer deposited by plasma CVD includes the steps of: successively depositing the p-type semiconductor layer, the i-type microcrystalline silicon-based photoelectric conversion layer and the n-type semiconductor layer on a substrate within the same plasma CVD film deposition chamber; transferring the substrate out of the film deposition chamber; and subsequently to the step of depositing the p-type semiconductor layer, the i-type microcrystalline silicon-based photoelectric conversion layer and the n-type semiconductor layer, eliminating influences of remaining n-type impurities on a cathode and/or within the film deposition chamber.
REFERENCES:
patent: 5563075 (1996-10-01), Saito et al.
patent: 2000-243993 (2000-09-01), None
patent: 2000-252495 (2000-09-01), None
Fukuoka Yusuke
Kishimoto Katsushi
Nomoto Katsuhiko
Dang Phuc T.
Nixon & Vanderhye P.C.
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