Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2006-04-04
2006-04-04
Huynh, Andy (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S300000, C257S306000, C257S307000, C257S308000, C257S595000, C257S597000, C257S924000
Reexamination Certificate
active
07023038
ABSTRACT:
The present invention disclosed a silicon barrier capacitor device structure. By applying CVD or PVD technologies to deposit poly-silicon layers as the dielectric of capacitor on the doping region of the wafer, then implant a high-density (1016˜1021/cm3) impurity of the group III or group V elements and oxygen ion or nitrogen ion to the poly-silicon layer. After implantation, deposit a low resistance and high melting point conductor on the poly-silicon layer for the electrode. to form a capacitor structure, or repeat all of the deposition poly-silicon and both of the low resistance and high melting point conductor on the poly-silicon layer more than once. All of the odd electrodes are connected together. The even electrodes and the substrate are connected together, too. At last, apply high temperature furnace annealing to the devices. The grain boundary of the silicon was oxidized by oxygen and nitrogen to form an isolation film to be the insulation film. The impurity of group III or group V will decrease the resistance of the grain.
REFERENCES:
patent: 4874716 (1989-10-01), Rao
patent: 5037772 (1991-08-01), McDonald
patent: 03032053 (1991-02-01), None
Huynh Andy
Jong Fuh-Cheng
Perkins Coie LLP
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