Silicon backside etch for semiconductors

Details Silicon backside etch for semiconductors Silicon backside etch for semiconductors

1990-08-21

1991-11-12

Powell, William A.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156630, 156653, 156657, 156662, 252 795, 357 2311, 437 52, 437225, H01L 21306, B44C 122, C03C 1500, C03C 2506

Patent

active

050644980

ABSTRACT:
A technique for analyzing defective semiconductor chips is disclosed. The silicon substrate of the chip is etched away, leaving the memory cells exposed for viewing. The method includes the steps of: removing oxide from the backside of a semiconductor device; and, placing the semiconductor device into a solution of choline and water. The solution etches away the substrate. The memory cells may be photographed and viewed by TEM and SEM techniques.

REFERENCES:
patent: 3721588 (1973-03-01), Hays
patent: 3923567 (1975-12-01), Lawrence
patent: 4544416 (1985-10-01), Meador et al.
patent: 4924589 (1990-05-01), Leedy
patent: 4978634 (1990-12-01), Shen et al.
Reinhard Lemme et al., "Failure Analysis of DRAMs", Siemens AG, Munich, FRG, pp. 31-39.

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