Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2005-08-16
2005-08-16
Tran, Minhloan (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S690000, C257S692000, C257S698000, C257S771000
Reexamination Certificate
active
06930355
ABSTRACT:
A semiconductor device comprising a semiconductor substrate having first and second surfaces opposing each other, the substrate including a plurality of cells sharing a common drain region, each of the cells having source and gate regions, a surface source electrode connected to the source region of each of the cells and provided on the first surface, a strap member coupled with the surface source electrode by ultrasonic waves, a gate polysilicon wiring layer connecting the gate region of each of the cells and having a silicide layer in at least a portion of a surface thereof, a surface gate electrode connected to the gate polysilicon wiring layer and provided on the first surface, and a drain electrode provided on the second surface and shared by the cells.
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patent: 5703399 (1997-12-01), Majumdar et al.
patent: 6307755 (2001-10-01), Williams et al.
patent: 2000-114445 (2000-04-01), None
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U.S. Appl. No. 10/289,339, filed Nov. 7, 2002, Takano et al.
U.S. Appl. No. 10/438,814, filed May 16, 2003, Matsuki et al.
U.S. Appl. No. 10/686,587, filed Oct. 17, 2003, Funato et al.
Kawano Takahiro
Matsuki Hirobumi
Takano Akio
Dickey Thomas L
Tran Minhloan
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