Silicide/semiconductor structure and method of fabrication

Details Silicide/semiconductor structure and method of fabrication Silicide/semiconductor structure and method of fabrication

2004-06-30

2008-11-18

Warren, Matthew E (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Schottky barrier

Specified materials

C257S377000, C257S472000, C257S476000, C257S485000, C257SE29271, C257SE29311

Reexamination Certificate

active

07453133

ABSTRACT:
A preferred embodiment of the present invention comprises a dielectric/metal/2ndenergy bandgap (Eg) semiconductor/1stEgsubstrate structure. In order to reduce the contact resistance, a semiconductor with a lower energy bandgap (2ndEg) is put in contact with metal. The energy bandgap of the 2ndEgsemiconductor is lower than the energy bandgap of the 1stEgsemiconductor and preferably lower than 1.1eV. In addition, a layer of dielectric may be deposited on the metal. The dielectric layer has built-in stress to compensate for the stress in the metal, 2ndEgsemiconductor and 1stEgsubstrate. A process of making the structure is also disclosed.

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