Semiconductor device manufacturing: process – Forming schottky junction – Using platinum group metal
Reexamination Certificate
2005-03-22
2005-03-22
Dang, Phuc T. (Department: 2818)
Semiconductor device manufacturing: process
Forming schottky junction
Using platinum group metal
C438S595000
Reexamination Certificate
active
06869866
ABSTRACT:
A method for manufacturing an integrated circuit having a plurality of semiconductor devices including an n-type field effect transistor and a p-type field effect transistor on a semiconductor wafer by creating a spacer having a first width for the n-type field effect transistor and creating a spacer having a second width for the p-type field effect transistor, the first width being greater than the second width and depositing silicide material on the semiconductor wafer such that tensile mechanical stresses are formed within a channel of the n-type field effect transistor and compressive stresses are formed within a channel of the p-type field effect transistor.
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Chidambarrao Dureseti
Dokumaci Omer H.
Rengarajan Rajesh
Steegen An L.
Abate Joseph P.
Dang Phuc T.
McGuireWoods LLP
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