Silicide interconnection with schottky barrier diode isolation

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode

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257267, 257280, 257281, 257282, 257285, 257351, 257357, 257479, 257471, H01L 2980, H01L 2701, H01L 2713, H01L 2934

Patent

active

052508340

ABSTRACT:
In a semiconductor device, an interconnection of differentially doped diffusion regions formed on a substrate includes an interconnecting layer disposed between the two diffusion regions so that the two regions are coupled to one another. The interconnect region is defined by the existing mask boundaries of N+ dopant and P+ dopant regions such that N+ and P+ dopant is not allowed to enter the interconnect region. Thus, the interconnect region is defined without requiring additional masking and etching steps. Once the interconnect region is defined, then the interconnecting layer is formed by a deposition and sintering process. The interconnecting layer provides a schottky barrier and ohmic contact.

REFERENCES:
patent: 4156246 (1979-05-01), Pedersen
patent: 4470061 (1984-09-01), Nakai
patent: 4896199 (1990-01-01), Tsuzuki et al.
patent: 4980745 (1990-12-01), Muroga
patent: 5016078 (1991-05-01), Taillet
patent: 5061981 (1991-10-01), Hall
patent: 5126825 (1992-06-01), Harada

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