Semiconductor device manufacturing: process – Coating of substrate containing semiconductor region or of... – Insulative material deposited upon semiconductive substrate
Reexamination Certificate
2005-09-13
2005-09-13
Le, Thao P. (Department: 2818)
Semiconductor device manufacturing: process
Coating of substrate containing semiconductor region or of...
Insulative material deposited upon semiconductive substrate
C438S763000, C438S780000
Reexamination Certificate
active
06943123
ABSTRACT:
A method of producing a weakly branched silica membranes coated onto a substrate using a two-step catalysed hydrolysis sol-gel process. A tetraethylorthosilicate (TEOS)/ethanol solution is formed and placed in an ice bath. An acid/water solution is formed and added to the TEOS/ethanol solution, to form a TEOS/ethanol/acid/water solution, which inturn is refluxed. A two-step sol is prepared by adding water and nitric acid to the refluxed TEOS/ethanol/acid/water solution and initiating a two-step sol-gel process. From the two-step sol a membrane film layer is deposited on a substrate, for use in a number of applications, including selective separation of gases.
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Diniz Da Costa Joao Carlos
Lu GaoQing
Ruldolph Victor
Gordon & Rees LLP
Le Thao P.
The University of Queensland
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