Signal sensing circuits for memory system using dynamic gain mem

Details Signal sensing circuits for memory system using dynamic gain mem Signal sensing circuits for memory system using dynamic gain mem

1996-09-05

1997-07-08

Zarabian, A.

Static information storage and retrieval

Systems using particular element

Flip-flop

365208, G11C 1100

Patent

active

056468830

ABSTRACT:
A memory system includes a plurality of gain memory cells connected via bit bits to sense amplifiers with each sense amplifier having at least two pairs of metal oxide semiconductor (MOS) transistors which have opposite conductivity types. Each gain memory cell has two serially connected n-channel MOS transistors with a diode connected between a gate of a first of the transistors and a source thereof. Three illustrative embodiments of sense amplifiers are used with the gain memory cells.

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"Fully Scalable Gain Memory Cell for Future DRAMS", Krautschneider et al., Microelectronic Engineering, vol. 15, 1991, Amsterdam, NL, pp. 367-370.

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