SiGe thin film or SOI MOSFET and method for making the same

Details SiGe thin film or SOI MOSFET and method for making the same SiGe thin film or SOI MOSFET and method for making the same

1992-08-10

1995-10-24

Prenty, Mark V.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257365, 257 66, 257192, 257194, 437126, H01L 2712

Patent

active

054612500

ABSTRACT:
A dual gate thin film or SOI MOSFET device having a sufficiently thin body thickness with one or more semiconductor channel layer(s) sandwiched by semiconductor layers having a different energy band structure to automatically confine carriers to the channel layer(s) without the need for channel grading or modulation doping. Preferred embodiments employ strained layer epitaxy having Si/SiGe/Si or SiGe/Si/SiGe semiconductor layers.

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