Active solid-state devices (e.g. – transistors – solid-state diode – Including semiconductor material other than silicon or... – Containing germanium – ge
Reexamination Certificate
2005-06-14
2005-06-14
Ngô, Ngân V. (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Including semiconductor material other than silicon or...
Containing germanium, ge
C257S019000, C257S190000
Reexamination Certificate
active
06906400
ABSTRACT:
A semiconductor device is provided comprising a semiconductor substrate having on its top a Thin Strain Relaxed Buffer. The Thin Strain Relaxed Buffer consists of a stack of three layers of essentially constant Ge concentration. The three layers include a first epitaxial layer of Si1-xGex, a second epitaxial layer of Si1-xGex:C, and a third epitaxial layer of Si1-xGexon the second epitaxial layer. A method to fabricate such a buffer is also provided.
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Caymax Mathieu
Delhougne Romain
Loo Roger
Meunier-Beillard Philippe
Interuniversitair Microelektronica Centrum (IMEC)
Knobbe Martens Olson & Bear LLP
Koninklijke Philips Electronics
Ngo Ngan V.
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