Sidewall strap

Fishing – trapping – and vermin destroying

Patent

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Details

437186, 437189, 437193, 437228, H01L 21283

Patent

active

055211186

ABSTRACT:
The present invention is a sidewall connector providing a conductive path linking at least two conductive regions. The sidewall connector has a top portion comprising an outer surface. A conductive member contacts the top portion, connecting the rail to a conductive region or to an external conductor. An etch stop layer located on a conductive region can be used to protect the conductive region during the directional etch to form the sidewall connector. A conductive bridge is then used to link exposed portions of the conductive region and the conductive sidewall rail, the conductive bridge extending across the thickness of the etch stop layer. A "T" connector is formed by the process, starting with a pair of intersecting sidewalls wherein the two sidewalls have top edges at different heights where they intersect. The connector is used to form a strap for a DRAM cell.

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C. G. Jambotkar, "Submicrometer-Wide Polysilicon Resistors", IBM Technical Disclosure Bulletin, vol. 25, No. 9, Feb., 1983, pp. 4785-4788.
H. S. Bhatia et al., "Process For Making Sidewall Resistors With Single Crystal Contacts", IBM Technical Disclosure Bulletin, vol. 26, No. 2, Jul. 1983, pp. 623-625.
D. M. Kenney, "Diffusion Defined Bridge Contact", IBM Technical Disclosure Bulletin, vol. 29, No. 8, Jan. 1987, p. 3423.

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