Sidewall spacer using an overhang

Details Sidewall spacer using an overhang Sidewall spacer using an overhang

1995-09-08

1997-07-29

Breneman, R. Bruce

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

1566571, 15665911, 216 46, 437228, 437 67, H01L 213105

Patent

active

056518579

ABSTRACT:
Improved film spacers for the sidewalls within semiconductor structures are disclosed. The spacers are made of non-conformal, organic materials, such as polyimides, acrylates, methacrylates, and various photoresist compositions. They are formed on the sidewalls by a process which involves the formation of overhang structures. The film spacers may be used for a variety of applications, such as sidewall imaging, control of dopant diffusion in an FET, formation of borderless contacts, and the manufacture of a resistor from an FET.

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