Semiconductor device manufacturing: process – Chemical etching
Reexamination Certificate
2005-08-02
2005-08-02
Le, Thao P. (Department: 2818)
Semiconductor device manufacturing: process
Chemical etching
C438S706000
Reexamination Certificate
active
06924235
ABSTRACT:
An improved method for introducing gases into an alternating plasma etching/deposition chamber is provided by the present invention. To minimize the introduction of pressure pulses into the alternating etching/deposition chamber when the deposition and etchant gas supplies are switched on and off, a mass flow controller is used to provide a relatively constant flow of gas. A gas bypass or a gas exhaust is provided such that when a gas inlet to the alternating etching/deposition chamber is closed an alternative path is provided for the flow of gas from the mass flow controller. The provision of a bypass or exhaust maintains the pressure of the gas received from the mass flow controller at a substantially constant level. The elimination or minimization of a pressure pulse of the gas helps increase the smoothness of the walls of high aspect ratio features etched in a silicon substrate in the alternating etching/deposition chamber.
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Pulse-Time-Modulated Plasma Etching for High Performance Polysilicon Patterning on Thin Gate Oxides
Johnson David
Lai Shouliang
Westerman Russell
Holland & Knight LLP
Le Thao P.
Unaxis USA Inc.
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