Sidewall formation for high density polymer memory element...

Details Sidewall formation for high density polymer memory element... Sidewall formation for high density polymer memory element...

2006-03-21

2006-03-21

Flynn, Nathan J. (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Organic semiconductor material

C257S004000, C257S005000

Reexamination Certificate

active

07015504

ABSTRACT:
Systems and methodologies are disclosed for increasing the number of memory cells associated with a lithographic feature. The systems comprise memory elements that are formed on the sidewalls of the lithographic feature by employing various depositing and etching processes. The side wall memory cells can have a bit line of the wafer as the first electrode and operate with a second formed electrode to activate a portion of an organic matter that is formed there between.

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