Sidewall doping technique for SOI transistors

Details Sidewall doping technique for SOI transistors Sidewall doping technique for SOI transistors

1993-01-08

1994-09-13

Fourson, George

Fishing, trapping, and vermin destroying

437 40, 437 62, H01L 21265, H01L 21302, H01L 2176

Patent

active

053468392

ABSTRACT:
A method of sidewall doping is described wherein the implantation of the dopant is done after the high temperature sidewall oxidation formation. Therefore, this method allows high concentrations of the dopant to be retained along the sidewall thus decreasing the corner coupling.

REFERENCES:
patent: 4675978 (1987-06-01), Swartz
patent: 4753896 (1988-06-01), Matloubian
patent: 4879254 (1989-11-01), Tsuzuki et al.
patent: 4963502 (1990-10-01), Teng et al.
patent: 4978626 (1990-12-01), Poon et al.
patent: 5053345 (1991-10-01), Schnable et al.
Ghandhi, Sorab K., VLSI Fabrication Principles--Silicon and Gallium Arsenide, 1983, pp. 524-526.

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