Side-bonding method of flip-chip semiconductor device, MEMS...

Details Side-bonding method of flip-chip semiconductor device, MEMS... Side-bonding method of flip-chip semiconductor device, MEMS...

2005-04-26

2005-04-26

Picardat, Kevin M. (Department: 2822)

Semiconductor device manufacturing: process

Making device or circuit responsive to nonelectrical signal

Physical stress responsive

C438S055000, C438S108000, C438S612000, C257S415000, C257S774000, C257S780000

Reexamination Certificate

active

06884650

ABSTRACT:
A side-bonding method of a flip-chip semiconductor device, a MEMS device package and a package method using the same, in which firm bonding and insensitivity to surface roughness may be obtained, include forming a UBM on a bonding line of a lower substrate having a semiconductor device formed thereon, plating solder on the UBM on the lower substrate, forming a trench in the upper substrate to contact the lower substrate at a location corresponding to a location of the solder and forming a second UBM in the trench, coupling the upper substrate and the lower substrate by inserting the solder into the trench, and heating the upper substrate and the lower substrate at a temperature higher than a melting point of the solder so that the solder is wetted toward sides of the trench to bond the upper substrate and the lower substrate.

REFERENCES:
patent: 5742100 (1998-04-01), Schroeder et al.
patent: 6107109 (2000-08-01), Akram et al.
patent: 6294837 (2001-09-01), Akram et al.
patent: 6459150 (2002-10-01), Wu et al.

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