Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2008-03-31
2010-10-19
Tran, Long K (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S340000, C257S341000, C257S342000, C257S343000, C257S452000, C257S453000, C257S471000, C257S493000, C257SE29104, C257SE29270
Reexamination Certificate
active
07816733
ABSTRACT:
A semiconductor device having a JBS diode includes: a SiC substrate; a drift layer on the substrate; an insulation film on the drift layer having an opening in a cell region; a Schottky barrier diode having a Schottky electrode contacting the drift layer through the opening and an ohmic electrode on the substrate; a terminal structure having a RESURF layer in the drift layer surrounding the cell region; and multiple second conductive type layers in the drift layer on an inner side of the RESURF layer contacting the Schottky electrode. The second conductive type layers are separated from each other. The second conductive type layers and the drift layer provide a PN diode. Each second conductive type layer has a depth larger than the RESURF layer.
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Office Action dated Apr. 28, 2009 from Japan Patent Office in the corresponding JP Application No. 2007-125593 (and English Translation).
Office Action dated Apr. 28, 2009 from Japan Patent Office in the corresponding JP Application No. 2007-125594 (and English Translation).
U.S. Appl. No. 12/078,350, filed Mar. 31, 2008, Okuno et al.
Office Action mailed May 24, 2010 in related U.S. Appl. No. 12/078,350.
Okuno Eiichi
Yamamoto Takeo
DENSO CORPORATION
Posz Law Group , PLC
Tran Long K
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