SiC semiconductor device having outer periphery structure

Details SiC semiconductor device having outer periphery structure SiC semiconductor device having outer periphery structure

2011-03-29

2011-03-29

Jackson, Jr., Jerome (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

With means to increase breakdown voltage threshold

With physical configuration of semiconductor surface to...

C257S077000, C257S492000, C257S493000, C257SE21054, C257SE21065, C257SE29006, C257SE29007

Reexamination Certificate

active

07915705

ABSTRACT:
A SiC semiconductor device includes: a SiC substrate; a SiC drift layer on the substrate having an impurity concentration lower than the substrate; a semiconductor element in a cell region of the drift layer; an outer periphery structure including a RESURF layer in a surface portion of the drift layer and surrounding the cell region; and an electric field relaxation layer in another surface portion of the drift layer so that the electric field relaxation layer is separated from the RESURF layer. The electric field relaxation layer is disposed on an inside of the RESURF layer so that the electric field relaxation layer is disposed in the cell region. The electric field relaxation layer has a ring shape.

REFERENCES:
patent: 6979863 (2005-12-01), Ryu
patent: 2004/0173820 (2004-09-01), Kinoshita et al.
patent: 2005/0045892 (2005-03-01), Hayashi et al.
patent: 2006/0065899 (2006-03-01), Hatakeyama et al.
patent: A-2003-158259 (2003-05-01), None
patent: A-2004-335815 (2004-11-01), None
Kinoshita et al., “Guard Ring Assisted RESURF: A New Termination Structure Providing Stable and High Breakdown Voltage for SiC Power Devices”, Tech. Digest of ISPSD '02, pp. 253-256.
Office action from Japan Patent Office dated Apr. 22, 2009 in the corresponding JP Application No. 2007-109223 (and English Translation).

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