Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2008-12-23
2010-12-14
Mandala, Victor A (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S332000, C257S342000, C257SE29262, C257SE21410, C257SE29169, C438S270000, C438S272000, C438S286000
Reexamination Certificate
active
07851854
ABSTRACT:
A SiC semiconductor device includes: a substrate; a drift layer on the substrate; a trench on the drift layer; a base region in the drift layer sandwiching the trench; a channel between the base region and the trench; a source region in the base region sandwiching the trench via the channel; a gate electrode in the trench via a gate insulation film; a source electrode coupled with the source region; a drain electrode on the substrate opposite to the drift layer; and a bottom layer under the trench. An edge portion of the bottom layer under a corner of a bottom of the trench is deeper than a center portion of the bottom layer under a center portion of the bottom of the trench.
REFERENCES:
patent: 2009/0032821 (2009-02-01), Onose et al.
patent: 2009/0072241 (2009-03-01), Harris et al.
patent: A-2001-267570 (2001-09-01), None
Kato Nobuyuki
Okuno Eiichi
Suzuki Naohiro
DENSO CORPORATION
Mandala Victor A
Moore Whitney
Posz Law Group , PLC
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