SiC semiconductor device comprising a pn junction

Details SiC semiconductor device comprising a pn junction SiC semiconductor device comprising a pn junction

1997-06-26

1999-08-03

Mintel, William

Active solid-state devices (e.g., transistors, solid-state diode

Specified wide band gap semiconductor material other than...

257 77, 257655, 257657, H01L 310256, H01L 310312

Patent

active

059328940

ABSTRACT:
A semiconductor device of planar structure, comprises a pn junction, formed of a first type conducting layer and on top thereof a second type conducting layer, both layers of doped silicon carbide, the edge of the second of the layers being provided with an edge termination (JTE), enclosing stepwise or continuously decreasing effective sheet charge density towards the outer border of the termination, wherein the pn junction and its JTE are covered by a doped or undoped SiC third layer.

REFERENCES:
patent: 5455432 (1995-10-01), Hartsell et al.
patent: 5510632 (1996-04-01), Brown et al.
patent: 5543637 (1996-08-01), Baliga
patent: 5705406 (1998-01-01), Rottner et al.
patent: 5763905 (1998-06-01), Harris
Bhatnagar et al., "Comparison of 6H--SiC, 3C--SiC, and Si for Power Devices," IEEE Transactions on Electron Devices, vol. 40, No. 3, Mar. 1993, pp. 645-655.
Neudeck et al., "2000 V 6H--SiC p-n junction diodes grown by chemical vapor deposition," Appl. Phys. Lett. 64, vol. 11, Mar. 1994, pp. 1386-1388.

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