SiC power MOSFET device structure

Details SiC power MOSFET device structure SiC power MOSFET device structure

1994-06-09

1995-02-28

Carroll, J.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257 77, 257401, 257412, 257613, H01L 2910, H01L 2978, H01L 29161, H01L 2920

Patent

active

053939999

ABSTRACT:
A MOSFET (100) device having a silicon carbide substrate (102) of a first conductivity type. A first epitaxial layer (104) of said first conductivity type and a second epitaxial layer (106) of a second conductivity type are located on a top side of the substrate (102). An insulator layer (108) separates gate electrode (112) from second epitaxial layer (106). A drift region (118) of the first conductivity type is located within the second epitaxial layer (106) on the first side of the gate electrode (112). The drift region has an extension which extends through the second epitaxial layer (106) to the first epitaxial layer (104). Source regions (116) and body contact regions (122) are located within the second epitaxial layer (106) on the second side of the gate electrode (112). Source regions (116,) and body contact regions (122) are of opposite conductivity type. Source electrode (126) electrically connects source regions (116) and body contact regions (122 ). A drain electrode (128) is located on a bottom side of the substrate.

REFERENCES:
patent: 5229625 (1993-07-01), Suzuki et al.
patent: 5233215 (1993-08-01), Baliga
J. W. Palmour, et al. "Characterization of Device Parameters in High-Temperature Metal-Oxide-Semiconductor field-effect transistors in .beta.-SiC Thin Films", 26 Apr. 1988, extracted from: J. Appl. Phys. 64(4), 15 Aug. 1988, pp. 2168-2177.
Robert F. Davis, et al. "Thin Film Deposition and Microelectronic and Optoelectronic Device Fabrication and Characterization in Monocrystalline Alpha and Beta Silicon Carbide", extracted from: IEEE vol. 79, No. 5, May 1991, pp. 677-701.
K. Furukawa, et al. "Insulated-Gate and Junction-Gate FET's of CVD-Grown .beta.-SiC", extracted from: IEEE vol. EDL-8, No. 2, Feb. 1987, pp. 48-49.
K. Shibahara, et al. "Inversion-Type N-Channel MOSFET Using Antiphase-Domain Free Cubic-SiC Grown on Si(100)" extracted from: (1986 International) Conference on Solid State Device and Materials, Tokyo, 1986, pp. 717-720.

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