Semiconductor device manufacturing: process – Formation of electrically isolated lateral semiconductive... – Total dielectric isolation
Patent
1998-12-09
2000-08-15
Chaudhuri, Olik
Semiconductor device manufacturing: process
Formation of electrically isolated lateral semiconductive...
Total dielectric isolation
439960, H01L 2144
Patent
active
061035904
ABSTRACT:
A method of selectively forming porous silicon regions (106) in a silicon substrate (100). A masking layer (104) of SiC is deposited by PECVD over the substrate (100) using an organosilicon precursor gas such as trimethylsilane, silane/methane, or tetramethylsilane at a temperature between 200-500.degree. C. The masking layer (104) of SiC is then patterned and etched to expose the region of the substrate (100) where porous silicon is desired. An anodization process is performed to convert a region of the substrate to porous silicon (106). The SiC masking layer (104) withstands the HF electrolyte of the anodization process with little to no degradation.
REFERENCES:
patent: 4063901 (1977-12-01), Shiba
patent: 5023200 (1991-06-01), Blewer et al.
patent: 5482598 (1996-01-01), Isaka et al.
patent: 6017773 (2000-01-01), Fauchet et al.
J. Electrochem. Soc., vol. 140, No. 3, Mar. 1993 .COPYRGT. The Electrochemical Society, Inc. "Low Pressure Chemical Vapor Deposition of Silicon Carbide from Diethylsilane," pp. 851-854 (J.M. Grow, R.A. Levy, Y.T. Shi and R.L. Pfeffer).
N.H. Elsevier, Materials Letters 23 (1995), "Photolithographic Patterning of Porous Silicon Using Silicon Nitride and Silicon Carbide Masks," pp. 209-214 (H Wang, B. Welker, Y. Gao, J.F. Federici, R.A. Levy).
J. Electrochem. Soc., vol. 140, No. 10, Oct. 1993 .COPYRGT. The Electrochemical Society, Inc. "Low Pressure Chemical Vapor Deposition of Silicon Carbide from Ditertiarybutylsilane," pp. 3001-3007 (J.M. Grow, R.A. Levy, M. Bhaskaran,H.J. Boeglin and R. Shalvoy).
N.H. Elsevier, Thin Solid Films 276 (1996), "Formation of Porous Silicon on Patterned Substrates," pp. 257-260 (M. Kruger, R. Arens-Fischer, M. Thonissen, H. Munder, M.G. Berger, H. Luth, S. Hilbrich and W. Theiss).
N.H. Elsevier, Thin Solid Films 255 (1995), "P Wells Made of Porous Silicon for Power Devices: Determination of the Formation Steps," pp. 321-324 (P. Dehu, A. Senes and F. Miserey).
Mat. Res. Soc. Symp. Proc. vol. 380, 1995 Materials Research Society, "Manufacturing of Submicron Light-Emitting Porous Silicon Areas for Miniature LEDs" pp. 73-78 (S.P. Duttagupta, C. Peng, L. Tsybeskov and P.M. Fauchet).
Mat. Res. Soc. Symp. Proc. vol. 358, 1995 Materials Research Society, "Micron-Size and Submicron-Size Light-Emitting Porous Silicon Structures," pp. 647-652 (S.P. Duttagupta, P.M. Fauchet, C. Peng, S.K. Kurinec, K. Hirschman and T.N. Blanton).
Appl. Phys. Lett. 64 (11), Mar. 14, 1994 .COPYRGT. 1994 American Institute of Physics "Selective-Area Room Temperature Visible Photoluminescence from SiC/Si Heterostructures," pp. 1419-1420 (A.J. Steckl, J.N. Su, J. Xu, J.P. Li, C. Yuan, P.H. Yih and H.C. Mogul).
N.H. Elsevier, Thin Solid Films 255 (1995), "Sub-Micrometre Luminescent Porous Silicon Structures Using Lithography Patterned Substrates," pp. 329-333 (A.G. Nassiopoulos, S. Grigoropoulos, L. Canhamer, A. Halimaoui, I. Berbezier, E. Gogolides, D. Papadimitriou).
Jpn. J. Appl. Phys. vol. 35 (1996) Part 2, No. 7B, July 15 "Utilization of GaAs Masking Layers for Formation of Patterned Porous Silicon," pp. L865-L868 (Ming-Kwei Lee, Cheng-Chung Hu and Yu-Hsiung Wang).
N.H. Elsevier, Materials Letters 23 (1995) "Growth Kinetics and Characterization of Low Pressure Chemically Vapor Deposited Si.sub.3 N.sub.4 Films from (C.sub.4 H.sub.9) .sub.2 SiH.sub.2 and NH.sub.3 " pp. 187-193 (J.M. Grow, R.A. Levy, X. Fan and M. Bhaskaran).
Prinslow Douglas A.
Swanson Leland S.
Brady III W. James
Chaudhuri Olik
Garner Jacqueline J.
Nai Anh Duy
Telecky Jr. Frederick J.
LandOfFree
SiC patterning of porous silicon does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with SiC patterning of porous silicon, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and SiC patterning of porous silicon will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2006155