SiC member and a method of fabricating the same

Details SiC member and a method of fabricating the same SiC member and a method of fabricating the same

1997-06-20

1999-08-10

Chaudhari, Chandra

Semiconductor device manufacturing: process

Formation of semiconductive active region on any substrate

Polycrystalline semiconductor

438931, 117 88, 117 89, C30B 2300

Patent

active

059373164

ABSTRACT:
The present invention is a SiC member and fabrication method thereof useful for heat treating semiconductors, wherein at least the surface of the member comprises: CVD-.beta.-phase SiC columnar crystals grown in perpendicular to the surface of the member; and CVD-.alpha.-phase SiC crystals grown up from interface of CVD-.beta.-phase columnar crystals. This structure thereby makes it possible to reduce the infrared ray transmittance of the heat treatment member and facilitates the heating of the heat treatment member by absorbing the infrared rays. Absorption of the IR rays results in favorable the temperature follow-up characteristics during the heat treatment of a semiconductor.

REFERENCES:
patent: 3956032 (1976-05-01), Powell et al.
patent: 5037502 (1991-08-01), Suzuki et al.
patent: 5604151 (1997-02-01), Goela et al.
patent: 5614447 (1997-03-01), Yamaga et al.

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