Si substrate and method of processing the same

Details Si substrate and method of processing the same Si substrate and method of processing the same

1996-01-03

1999-02-09

Dang, Thi

Etching a substrate: processes

Etching of semiconductor material to produce an article...

216 12, 216 41, 216 56, 216 87, 216 99, 216109, B05D 500

Patent

active

058689478

ABSTRACT:
A processed Si product suitable for use as, for example, an X-ray mask, is produced by a process having the steps of preparing a non-porous Si substrate, changing by anodization at least a portion of the substrate into porous Si thereby forming at least one porous Si region penetrating the substrate from one to the other side thereof, and effecting an etching on the substrate by using an etchant containing hydrofluoric acid so as to remove the porous Si region. The substrate may be provided with an etching stop layer. In such a case, an unsupported membrane region formed by the etching stop layer is left after the removal of the porous Si region.

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