Si-MOS high-frequency semiconductor device

Details Si-MOS high-frequency semiconductor device Si-MOS high-frequency semiconductor device

2005-01-18

2005-01-18

Thomas, Tom (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S173000, C257S356000, C257S379000, C257S546000

Reexamination Certificate

active

06844596

ABSTRACT:
A sophisticated and highly reliable high-frequency Si-MOS semiconductor device having high electrostatic discharge (ESD) resistance. Lateral polysilicon diodes are connected between high-frequency I/O signal lines and the external supply voltage, VDD, and between the ground, GND, and the high-frequency I/O signal lines, respectively. The forward direction of the diodes is the direction from the high-frequency I/O signal line to the supply voltage, VDD, and the direction from the ground, GND, to the high-frequency I/O signal line, respectively.

REFERENCES:
patent: 5939753 (1999-08-01), Ma et al.
patent: 5973897 (1999-10-01), Opris et al.
patent: 6002569 (1999-12-01), Horvath
patent: 6060752 (2000-05-01), Williams
patent: 6180996 (2001-01-01), Onoda et al.
patent: 6278312 (2001-08-01), Dabral et al.
patent: 6351363 (2002-02-01), Wang
patent: 20020086467 (2002-07-01), Chang et al.
patent: 11-224939 (1999-08-01), None
Dutoit et al., “Lateral Polysilicon p-n Diodes”, Journal of Electrochemcial Society, vol. 125, No. 10, 1978, pp. 1648-1651.
Miyawaki et al., “A 20-mm2, 1.8-V-Only, 16-Mb DINOR Flash Memory With Gate-Protected-Poly-Diode (GPPD) Charge Pump”, IEEE Journal of Solid-State Circuits, vol. 34, 1999, pp. 1551-1556.
Ker et al., “Novel Octagonal Device Structure For Output Transistors In Deep-Submicron Low-Voltage CMOS Technology”, IEDM, 1996, pp. 889-892.

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