Shunted phase change memory

Static information storage and retrieval – Systems using particular element – Resistive

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C365S163000, C257S002000, C257S003000

Reexamination Certificate

active

07916514

ABSTRACT:
By using a resistive film as a shunt, the snapback exhibited when transitioning from the reset state or amorphous phase of a phase change material, may be reduced or avoided. The resistive film may be sufficiently resistive that it heats the phase change material and causes the appropriate phase transitions without requiring a dielectric breakdown of the phase change material.

REFERENCES:
patent: 6791867 (2004-09-01), Tran
patent: 6861267 (2005-03-01), Xu et al.
patent: 7214632 (2007-05-01), Chiang
patent: 7217945 (2007-05-01), Dennison et al.
patent: 7242019 (2007-07-01), Wicker
patent: 7348590 (2008-03-01), Happ
patent: 7397681 (2008-07-01), Cho et al.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Shunted phase change memory does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Shunted phase change memory, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Shunted phase change memory will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-2716200

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.