Short-wavelength optoelectronic device including field emission

Details Short-wavelength optoelectronic device including field emission Short-wavelength optoelectronic device including field emission

1998-08-06

2000-10-31

Gulakowski, Randy

Etching a substrate: processes

Forming or treating optical article

216 25, 313309, B29D 1100, H01L 2100

Patent

active

061397601

ABSTRACT:
Provided with a method of fabricating a 200-250 nm short-wavelength optoelectronic device, which has a combination of an optical device with a plurality of acceleration electrodes and a field emission device with a plurality of acceleration electrodes, from a semiconductor having a 5-6 eV energe band gap, based on a principle that an electron-hole pair is produced using a highly energetic electron which is injected from a field emission device, and short-wavelength photons are emitted when the electron recombines with the hole and confined in a quantum well to emit a light corresponding to the energy level of the quantum well, thereby eliminating the need of using dopants for forming n-p junctions in the semiconductor and achieving high efficiency in terms of energy because highly energetic electrons result in one or more electron-hole pairs.

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John A. Edmond et al., "Blue LEDs, UV photodiodes and high-temperature rectifiers in 6H-SiC", 1993-Elsevier Sciences Publishers B.V., pp. 453-460.
Ivor Brodie et al., "Vacuum Microelectronic Devices", Proceedings of the IEEE, vol. 82, No. 7, Jul. 1994, pp. 1006-1034.

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