Short gate high power MOSFET and method of manufacture

Details Short gate high power MOSFET and method of manufacture Short gate high power MOSFET and method of manufacture

2007-12-03

2011-12-27

Warren, Matthew E (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S327000, C257S328000, C257S329000, C257S331000, C257S332000, C257S335000, C257SE29257, C257SE29259, C257SE29260, C257SE29262, C438S212000, C438S268000, C438S270000

Reexamination Certificate

active

08084813

ABSTRACT:
A short gate high power metal oxide semiconductor field effect transistor formed in a trench includes a short gate having gate length defined by spacers within the trench. The transistor further includes a buried region that extends beneath the trench and beyond a corner of the trench, that effectively shields the gate from high drain voltage, to prevent short channel effects and resultantly improve device performance and reliability.

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