Short circuit limiting in power semiconductor devices

Details Short circuit limiting in power semiconductor devices Short circuit limiting in power semiconductor devices

2011-07-26

2011-07-26

Jackson, Jr., Jerome (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S342000, C257S343000, C257S339000, C257SE29257, C257SE29258, C257SE29259, C257SE29260

Reexamination Certificate

active

07986005

ABSTRACT:
A power semiconductor device includes a semiconductor body. The semiconductor body includes a body region of a first conductivity type for forming therein a conductive channel of a second conductivity type; a gate electrode arranged next to the body region; and a floating electrode arranged between the gate electrode and the body region.

REFERENCES:
patent: 5164802 (1992-11-01), Jones et al.
patent: 5545908 (1996-08-01), Tokura et al.
patent: 6882573 (2005-04-01), Blanchard
patent: 2006/0060916 (2006-03-01), Girdhar et al.
patent: WO 8404197 (1984-10-01), None

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