Short channel trench MOSFET with reduced gate charge

Details Short channel trench MOSFET with reduced gate charge Short channel trench MOSFET with reduced gate charge

2005-07-19

2005-07-19

Thomas, Tom (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S329000, C257S330000, C257S341000, C257S342000, C257S492000, C257S493000

Reexamination Certificate

active

06919599

ABSTRACT:
A trench-type MOSgated device including high conductivity regions formed at the bottom of its trenches and field relief regions at or below the bottom of its channel region.

REFERENCES:
patent: 5442214 (1995-08-01), Yang
patent: 5929481 (1999-07-01), Hshieh et al.
patent: 6262453 (2001-07-01), Hshieh
patent: 6657254 (2003-12-01), Hshieh et al.
patent: 2001/0048116 (2001-12-01), Standing et al.

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