Short channel transistors

Details Short channel transistors Short channel transistors

1993-09-20

1994-09-13

Jackson, Jerome

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257346, 257409, H01L 2701, H01L 2900

Patent

active

053471539

ABSTRACT:
An improved short channel field effect transistor is provided which includes a semiconductor substrate having a given type dopant with source and drain electrodes, one of the electrodes having a diffusion of the type of dopant opposite to that of the given type dopant, a channel disposed between the source and drain electrodes, a region having the same type dopant as that of the substrate and aligned with the diffusion at the diffusion-channel interface, the region having sufficient dopant to prevent penetration of the depletion region generated by the diffusion into the substrate or at least to significantly limit the electric field which results from the junction between the diffusion and the substrate and an electrically conductive contact made with the diffusion, which may be, e.g., connected to a substantially constant bias or supply voltage source.

REFERENCES:
patent: 4101922 (1978-07-01), Tihanyi et al.
patent: 4506436 (1985-03-01), Bakeman, Jr. et al.
patent: 4737828 (1988-04-01), Brown
patent: 4961165 (1990-10-01), Ema
IBM Technical Disclosure Bulletin, vol. 21, No. 9, Feb. 1979, pp. 3823 to 3825, "Double Polysilicon Dynamic Random-Access Memory Cell With Increased Charge Storage Capacitance" by V. L. Rideout.

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