Short channel length MOSFET transistor

Details Short channel length MOSFET transistor Short channel length MOSFET transistor

1998-01-20

2000-01-04

Monin, Jr., Donald L.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257384, 257401, 257409, 257487, H01L 27088

Patent

active

060112905

ABSTRACT:
A semiconductor device is formed from a semiconductor substrate with a source and drain and a gate disposed thereon. The gate has a stepped profile with side portions with respective walls adjacent a respective one of the source and drain. The side portions of the gate are thinner than that of a center portion of the gate. The substrate is implanted with nitrogen forming first regions below the side portions of the gate and adjacent the surface of the substrate. The source and drain are implanted with nitrogen in second regions adjacent the side portions of the gate and spaced away from the surface of the substrate. The substrate is doped so that regions of the substrate lying above the second regions and to the side of the first regions are heavily doped, wherein the first and second regions implanted with nitrogen resist the doping.

REFERENCES:
patent: 5162884 (1992-11-01), Liou et al.
patent: 5434440 (1995-07-01), Yoshimoto et al.
patent: 5554871 (1996-09-01), Yamashita et al.
patent: 5610430 (1997-03-01), Yamashita et al.
patent: 5631485 (1997-05-01), Wei et al.
patent: 5658815 (1997-08-01), Lee et al.

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