Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2005-12-20
2005-12-20
Fourson, George (Department: 2823)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S327000, C257S328000, C257S329000, C257SE29262, C257SE29274
Reexamination Certificate
active
06977406
ABSTRACT:
The ultra high-speed vertical short channel insulated-gate static induction transistor with uniform operating characteristic which has the drain layer3consisting of an epitaxial single crystal layer on the main surface2of substrate1, the channel layer4with thickness 1000 Å or less on the drain layer, the source layer5consisting of an epitaxial single crystal layer on the channel layer4, and the insulated-gates6and7on the sidewalls of the drain, the channel, and the source layers. Since the thickness of 1000 Å or less is accurately controlled using the molecular layer epitaxial method and the channel layer4is grown up, the X-ray photolithography is not needed. Since the gate oxide film is formed by low temperature CVD using active oxygen, impurity re-distribution does not occur.
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Kanamoto Kyouzou
Kurabayashi Toru
Nishizawa Jun-ichi
Oizumi Toru
Fourson George
National Institute of Information and Communications Technology
Pham Thanh V.
Westerman Hattori Daniels & Adrian LLP
Zaidan Hojin Handotai Kenkyu Shinkokai
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