Shock resistant semiconductor device and method for producing sa

Details Shock resistant semiconductor device and method for producing sa Shock resistant semiconductor device and method for producing sa

1998-04-16

2000-02-15

Williams, Alexander Oscar

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Flip chip

257777, 257737, 257738, 257783, 257787, 257685, 257686, H01L 2510, H01L 2302, H01L 2334

Patent

active

060256486

ABSTRACT:
A plurality of substrates 1 to which have been flip-chip mounted semiconductor chips 2 are laminated by means of solder bumps 7 provided for the purpose of lamination. A elastic resin is caused to fill the space between the chip upper surface 9 and the substrate 1, thus providing a shock-absorbing material layer 8. By adopting this type of three-dimensional semiconductor modular structure, the shock-absorbing material layer 8 absorbs externally applied vibration and shock, thereby improving the immunity to vibration and shock.

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