Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2006-11-21
2006-11-21
Pert, Evan (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257SE29255
Reexamination Certificate
active
07138690
ABSTRACT:
An MOS device is formed comprising a semiconductor layer of a first conductivity type, a first source/drain region of a second conductivity type formed in the semiconductor layer, and a second source/drain region of the second conductivity type formed in the semiconductor layer and spaced apart from the first source/drain region. The MOS device further comprises a gate formed proximate an upper surface of the semiconductor layer and at least partially between the first and second source/drain regions, and a shielding structure formed proximate the upper surface of the semiconductor layer and between the gate and the second source/drain region, the shielding structure being electrically connected to the first source/drain region, the shielding structure being spaced laterally from the gate and being non-overlapping relative to the gate. In this manner, the MOS device is substantially compatible with a CMOS process technology.
REFERENCES:
patent: 5470791 (1995-11-01), Suguro et al.
patent: 6707102 (2004-03-01), Morikawa et al.
Xie Zhijian
Xu Shuming
Agere Systems Inc.
Pert Evan
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