Active solid-state devices (e.g. – transistors – solid-state diode – With shielding
Reexamination Certificate
2011-08-23
2011-08-23
Lee, Eugene (Department: 2891)
Active solid-state devices (e.g., transistors, solid-state diode
With shielding
C257S422000, C257S660000, C257S723000, C257S728000, C257SE23114, C438S121000, C174S051000, C174S520000, C174S521000, C361S800000, C361S816000, C361S818000
Reexamination Certificate
active
08004068
ABSTRACT:
Embodiments include shielded multi-layer packages for use with multi-chip modules and the like. A substrate (102) (e.g., chip carrier) has an adhesive layer (104), where electronic components (106, 108) are attached. An insulating layer (110) is formed over the plurality of electronic components, and a conductive encapsulant structure (115) is formed over the insulating layer. The adhesive layer is detached from the electronic components, and multi-layer circuitry (140) is formed over, and in electrical communication with, the plurality of electronic components. A shielding via (150) is formed through the multilayer circuitry such that it contacts the conductive encapsulant.
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Lin Jong-Kai
Tang Jinbang
Freescale Semiconductor Inc.
Gumedzoe Peniel M
Ingrassia Fisher & Lorenz P.C.
Lee Eugene
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