Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2006-02-17
2009-12-15
Tran, Tan N (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S331000, C257S332000, C257S333000, C257S334000, C257SE29201, C257SE29260
Reexamination Certificate
active
07633119
ABSTRACT:
This invention discloses a semiconductor power device that includes a plurality of power transistor cells surrounded by a trench opened in a semiconductor substrate. At least one of the cells constituting an active cell has a source region disposed next to a trenched gate electrically connecting to a gate pad and surrounding the cell. The trenched gate further has a bottom-shielding electrode filled with a gate material disposed below and insulated from the trenched gate. At least one of the cells constituting a source-contacting cell surrounded by the trench with a portion functioning as a source connecting trench is filled with the gate material for electrically connecting between the bottom-shielding electrode and a source metal disposed directly on top of the source connecting trench. The semiconductor power device further includes an insulation protective layer disposed on top of the semiconductor power device having a plurality of source openings on top of the source region and the source connecting trench provided for electrically connecting to the source metal and at least a gate opening provided for electrically connecting the gate pad to the trenched gate.
REFERENCES:
patent: 2003/0178676 (2003-09-01), Henninger et al.
patent: 2005/0167742 (2005-08-01), Challa et al.
patent: 2005/0167744 (2005-08-01), Yilmaz
patent: 2006/0008991 (2006-01-01), Hijzen et al.
Bhalla Anup
Lui Sik K
Alpha & Omega Semiconductor, Ltd
Lin Bo-In
Tran Tan N
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