Shielded gate trench (SGT) MOSFET cells implemented with a...

Details Shielded gate trench (SGT) MOSFET cells implemented with a... Shielded gate trench (SGT) MOSFET cells implemented with a...

2006-03-10

2008-11-18

Pert, Evan (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S331000, C257S332000, C257S333000, C257S449000, C257S471000, C257SE51009

Reexamination Certificate

active

07453119

ABSTRACT:
This invention discloses a semiconductor power device that includes a plurality of power transistor cells surrounded by a trench opened in a semiconductor substrate. At least one active cell further includes a trenched source contact opened between the trenches wherein the trenched source contact opened through a source region into a body region for electrically connecting the source region to a source metal disposed on top of an insulation layer wherein a trench bottom surface of the trenched source contact further covered with a conductive material to function as an integrated Schottky barrier diode in said active cell. A shielding structure is disposed at the bottom and insulated from the trenched gate to provide shielding effect for both the trenched gate and the Schottky diode.

REFERENCES:
patent: 6031265 (2000-02-01), Hshieh
patent: 6071552 (2000-06-01), Ku
patent: 6388266 (2002-05-01), Baliga
patent: 2003/0020134 (2003-01-01), Werner et al.
patent: 2005/0199918 (2005-09-01), Calafut et al.

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