Shielded field-effect transistor devices

Details Shielded field-effect transistor devices Shielded field-effect transistor devices

1991-02-26

1993-02-16

Larkins, William D.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257365, 257408, 257488, H01L 29784

Patent

active

051875527

ABSTRACT:
Field-effect transistor devices are provided having a relatively substantial capability to withstand reverse bias voltages. This capability is provided through providing shields in these devices near junctions in such devices which are subject to breakdown under large reverse bias voltages, those shields being operable at selected voltages. The device can also be provided having a relatively low "on" condition resistance between the source and drain terminals thereof by virtue of a geometrical design choice. A method for fabricating one such device is also disclosed.

REFERENCES:
patent: T964009 (1977-11-01), Chiu et al.
patent: 3436623 (1969-04-01), Beer
patent: 3836998 (1974-09-01), Kocsis et al.
patent: 3845495 (1974-10-01), Cauge et al.
patent: 4058822 (1977-11-01), Awane et al.
patent: 4148046 (1979-04-01), Hendrickson et al.
patent: 4172260 (1979-10-01), Okabe et al.
patent: 4599576 (1986-07-01), Yoshida et al.
Okabe et al., IEEE IEDM, Technical Digest, pp. 416-419 (Dec. 1977).

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