Shared line magnetic random access memory cells

Details Shared line magnetic random access memory cells Shared line magnetic random access memory cells

2009-06-16

2011-10-04

Sofocleous, Alexander (Department: 2824)

Static information storage and retrieval

Systems using particular element

Magnetic thin film

C365S189160, C365S171000

Reexamination Certificate

active

08031519

ABSTRACT:
A memory unit with one field line; at least two thermally-assisted switching magnetic tunnel junction-based magnetic random access memory cells, each cell comprising a magnetic tunnel junction having an insulating layer disposed between a magnetic storage layer and a magnetic reference layer; wherein a selection transistor is connected to the magnetic tunnel junction; the one field line is used for passing a field current for switching a magnetization of the storage layer of the magnetic tunnel junctions of the cells. A magnetic memory device can be formed by assembling an array of the memory units, wherein at least two adjacent magnetic tunnel junctions of the cells can be addressed simultaneously by the field line. The memory unit and magnetic memory device have a reduced surface area. Magnetic memory devices with an increased density of memory units can be fabricated resulting in lower die fabrication cost and lower power consumption.

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