Shared data buffer in FeRAM utilizing word line direction...

Details Shared data buffer in FeRAM utilizing word line direction... Shared data buffer in FeRAM utilizing word line direction...

2005-03-29

2005-03-29

Yoha, Connie C. (Department: 2818)

Static information storage and retrieval

Systems using particular element

Ferroelectric

C365S072000, C365S230010, C365S230010

Reexamination Certificate

active

06873536

ABSTRACT:
A ferro-electric memory device system and method is described for accessing and sensing memory cells of an FeRAM memory array with an open bit line architecture. The memory device permits the sharing of certain memory circuits such as, a data buffer, and a sense amplifier between several segments of an array of FeRAM memory cells associated with a plurality of plate lines and/or word lines of the array. Various combinations of segmented bit lines, segmented plate lines and/or segmented word lines facilitate sharing the memory circuits of the device between the array segments or multiple arrays of memory cells.

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