Shaped contact layer for light emitting heterostructure

Details Shaped contact layer for light emitting heterostructure Shaped contact layer for light emitting heterostructure

2011-04-19

2011-04-19

Bryant, Kiesha R (Department: 2891)

Active solid-state devices (e.g., transistors, solid-state diode

Incoherent light emitter structure

Plural light emitting devices

C257S079000, C257S094000, C257SE33065

Reexamination Certificate

active

07928451

ABSTRACT:
An improved light emitting heterostructure and/or device is provided, which includes a contact layer having a contact shape comprising one of: a clover shape with at least a third order axis of symmetry or an H-shape. The use of these shapes can provide one or more improved operating characteristics for the light emitting devices. The contact shapes can be used, for example, with contact layers on nitride-based devices that emit light having a wavelength in at least one of: the blue spectrum or the deep ultraviolet (UV) spectrum.

REFERENCES:
patent: 6307218 (2001-10-01), Steigerwald et al.
patent: 2003/0047743 (2003-03-01), Li
patent: 2005/0133806 (2005-06-01), Peng et al.
patent: 2006/0046328 (2006-03-01), Raffetto et al.
patent: 2006/0289881 (2006-12-01), Chen et al.
PCT International Search Report and Written Opinion, Jul. 11, 2008, 9 pages.

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