Shallow trench source EPROM cell

Details Shallow trench source EPROM cell Shallow trench source EPROM cell

1995-03-14

1997-01-21

Limanek, Robert P.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257322, H01L 29788

Patent

active

055962130

ABSTRACT:
A Flash EPROM cell having buried source-side injection allows for low voltage programming from the source side. A cell having the inventive structure can be programmed at 4.0 V or less. The inventive cell comprises a source area which is at a lower plane than the drain region, and a program charge is transferred to the floating gate through the source-side injector. Instead of using a self-aligned high-energy n-type dopant implant at the source side to form the source side injector as used with previous cells, which can be difficult to control, etching the substrate before impurity doping allows for the controllable formation of a sharp point of doped silicon, and allows for improved programming at a lower voltage.

REFERENCES:
patent: 5019527 (1991-05-01), Ohshima et al.
patent: 5278438 (1994-01-01), Kim et al.

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