Shallow trench isolation with thin nitride liner

Details Shallow trench isolation with thin nitride liner Shallow trench isolation with thin nitride liner

1994-06-29

1995-09-05

Thomas, Tom

Fishing, trapping, and vermin destroying

437 63, 437978, 148DIG50, H01L 2176

Patent

active

054478847

ABSTRACT:
A method of forming shallow trench isolation with a nitride liner layer for devices in integrated circuits solves a problem of recessing the nitride liner that led to unacceptable voids in the trench filler material by using a liner thickness of less than 5 nm. A densification step of a pyrogenic oxide anneal at 800.degree. C. not only drives out impurities and achieves the same density as a conventional argon anneal at 1000.degree. C., but also drastically reduces the thermal load.

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R. Conti, et al.,"Electrically Enhanced Trench Isolation For ULSI Applications", IBM Technical Disclosure Bulletin, vol. 32, No. 12, May 1990.

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