Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Including dielectric isolation means
Patent
1997-12-12
2000-04-04
Guay, John
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
Including dielectric isolation means
257639, 257647, 257649, H01L 2704
Patent
active
060464879
ABSTRACT:
Disclosed is an improved process and liner for trench isolation which includes either a single oxynitride layer or a dual oxynitride (or oxide)
itride layer. Such a process and liner has an improved process window as well as being an effective O.sub.2 diffusion barrier and resistant to hot phosphoric and hydrofluoric acids.
REFERENCES:
patent: 4631803 (1986-12-01), Hunter et al.
patent: 4855804 (1989-08-01), Bergami et al.
patent: 5099304 (1992-03-01), Takemura et al.
patent: 5189501 (1993-02-01), Kawamura et al.
patent: 5190889 (1993-03-01), Poon et al.
patent: 5206182 (1993-04-01), Freeman
patent: 5384280 (1995-01-01), Aoki et al.
patent: 5387540 (1995-02-01), Poon et al.
patent: 5429977 (1995-07-01), Lu et al.
patent: 5447884 (1995-09-01), Fahey et al.
patent: 5492858 (1996-02-01), Bose et al.
patent: 5747866 (1998-05-01), Ho et al.
patent: 5780346 (1998-07-01), Arghavani et al.
patent: 5811347 (1998-09-01), Gardner et al.
M. R. Poponiak and P. J. Tsang, "Formation of Thick Si.sub.3 N.sub.4 or Si.sub.x O.sub.y N.sub.z On Substrate By Anodnitridization", IBM Technical Disclosure Bulletin, vol. 19, No. 03, Aug. 1976, p. 905.
Benedict John Preston
Dobuzinsky David Mark
Flaitz Philip Lee
Hammerl Erwin N.
Ho Herbert
Blecker Ira D.
Guay John
International Business Machines - Corporation
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