Shallow trench isolation structures and methods for forming...

Details Shallow trench isolation structures and methods for forming... Shallow trench isolation structures and methods for forming...

2011-07-19

2011-07-19

Mulpuri, Savitri (Department: 2812)

Semiconductor device manufacturing: process

Chemical etching

C438S218000, C438S294000, C438S700000, C438S717000, C438S725000, C257SE21218, C257SE21252, C257SE21256, C257SE21628, C257SE21642

Reexamination Certificate

active

07981800

ABSTRACT:
A shallow trench isolation (STI) structure and method for forming the same is provided that reduces defects in a nitride film used as a field oxide mask and variations in pad oxide thickness. Generally, the method involves depositing a nitride over pad oxide on a substrate using plasma enhanced chemical vapor deposition (PECVD), and patterning the PECVD nitride to form a field oxide mask. In certain embodiments, patterning the PECVD nitride involves: (i) forming a patterned resist layer on the PECVD nitride; (ii) etching in a process chamber at least one opening through at least the PECVD nitride; and (iii) stripping the patterned resist layer in-situ in the same process chamber in which the at least one opening was etched through the PECVD nitride using a fluorine based plasma. Other embodiments are also disclosed.

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