Shallow trench isolation structure with converted liner layer

Details Shallow trench isolation structure with converted liner layer Shallow trench isolation structure with converted liner layer

2007-01-16

2007-01-16

Lebentritt, Michael (Department: 2812)

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Grooved and refilled with deposited dielectric material

C438S221000, C438S243000, C438S244000, C438S296000, C438S420000, C438S421000, C438S425000, C438S430000, C438S435000, C438S436000, C438S437000, C438S438000, C438S439000, C257SE21546, C257SE21549, C257SE21573

Reexamination Certificate

active

10947481

ABSTRACT:
A STI (shallow trench isolation) structure is formed with a liner layer that is converted from an initial material to a subsequent material. For example, the liner layer is initially comprised of nitride during wet etch-back of a dielectric fill material comprised of oxide to protect an oxide layer on a semiconductor substrate. Thereafter, an exposed portion of the liner layer is converted into the subsequent material of oxide to protect the dielectric fill material within the STI opening during etching away of masking layers to prevent formation of dents in the STI structure.

REFERENCES:
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Korean Patent Application No. 10-2001-0074167 to Limbictorsengang et al., having Application date of Nov. 27, 2001 (w/ English Abstract page).

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